Silicon Carbide ogaumu paipa
| Nofoaga o le Amataga: | ōmea |
| Igoa Brand: | Semixlab |
| Numera faataitaiga: | SCFT-01 |
| Tusi Faamaonia: | ISO9001 |
| Lafoga Faʻatonu Aupito Manaomia: | 1 Vaega |
| tau: | Fa'afeso'ota'i mo upusii fa'apitoa |
| Faʻamatalaga: | Foam Anti-Static + Pusa Plywood(Fa'atonu) |
| Taimi Faaooina atu: | 60-90 Aso Ina ua maeʻa le faʻamaoniga o Poloaiga |
| Tuutuuga totogi: | T / T |
| Gafatia Tuuina atu: | 100 Iunite/Masina |
faʻamatalaga
Semixlab e tu'uina atu le Ultra-maualuga mama SiC ogaumu fa'aaumu faiga fa'aauaumu, semiconductor-grade fa'amama vaifofo ma 99.9999% mama fa'apipi'i ma le tu'uina atu laina atoatoa.
Fa'atatau taua
Tuuina atu se si'osi'omaga vevela e leai se filogia mo le gaosiga o le wafer: 99.9% SiC mama o substrate + 99.9999% mama o le CVD coating, tu'ufa'atasia ma se SiC atoa cantilever foe & wafer va'a faiga, e ausia le filogia u'amea i le potu faagasologa.
Igoa eseese mo oloa:
O le vevela maualuga o le ogaumu SiC paipa; silicon carbide paipa; maualuga mama SiC paipa; Silicon carbide paipa mo le ogaumu faasalalau; Silicon carbide paipa mo le faasalalauina & LPCVD faagasologa; SiC paipa mo RTP, SiC paipa mo oxidation
Fa'amatalaga autu:
Mama meafaitino: O le mea autu o le silicon carbide ma le mama o le sili atu i le 99.9%, ma le mama pe a uma le CVD coating e sili atu i le 99.9999% (6N grade).
Fa'atinoga o le vevela: O le maualuga o le fa'aogaina o le vevela 1650 ℃ (umi-umi), coefficient o le fa'alauteleina o le vevela: 4.6 × 10⁻⁶ / ℃, tutusa i le sone vevela tumau: ± 1.5℃ (1200℃);
Malosi fa'ainisinia: Malosi o le punou 450Mpa (i le vevela o le potu).

auiliili
| Mea fa'aletino ole Sintered Silicon Carbide | |
| meatotino | Tausaga masani |
| tuufaatasiga vailaau | SiC>99.9% |
| Tele tele | >3.07 g/cm³ |
| Fa'aa'oa'o fa'aa'oa'o | |
| Modulus o le malepelepe ile 20℃ | 270 MPa |
| Modulus o le malepelepe ile 1200℃ | 290 MPa |
| Malosi ile 20℃ | 2400 Kg/mm² |
| Malosi gau i le 20% | 3.3 MPa · m1/2 |
| Conductivity vevela ile 1200℃ | 45 w/m .K |
| Fa'alauteleina le vevela ile 20-1200℃ | 4.6 × 10-6/℃ |
| Max.working vevela | 1650 ℃ (taimi umi) |
| Tete'e te'i vevela ile 1200℃ | Lelei |
talosaga
Fa'aoga autu
Lave fanua vevela
Fa'atūina se fanua mautu ma tutusa vevela i totonu o le va o le 1200 ℃ i le 1650 ℃ (o le eseesega o le vevela i le sone vevela tumau o le ≤± 1.5 ℃)
Ia fa'amautinoa le tulaga fa'amamafa o fa'agasologa e pei o le fa'asalalauina, fa'ama'iina ma le fa'ama'i.
Fa'amama fa'a'ese'esega
poloka le faʻasalalauina o ion uʻamea (e pei o Fe / Ni / Cu, ma isi) e ala i mea maualuga-mama (pei o le SiC).
Fa'asao le fa'a'ese'esega i le va o kasa fa'agaioiga ma le si'osi'omaga i fafo.
Fa'agasolo ala kesi
Fa'atonu tonu le ta'amilosaga ma le tufatufaina atu o kasa tali (e pei ole O₂/N₂/SiH₄, ma isi)
Ausia fa'agaio'iga o le kasa fa'atasi i luga ole la'au wafer (pei o le SiO₂ tuputupu a'e).
Photovoltaic coating: Lagolago TOPCon/HJT cell PECVD faagasologa wafer felauaiga.
Faʻaaliga faʻaaogā
● Epitaxy
● Oxidation/Diffusion
● LPCVD/PECVD faagasologa
● Su'ega o III-V fa'afefiloi semiconductor
Fofo i vaega tiga o pisinisi
O a matou fofo e faʻafeiloaʻi ai tulaga tiga o matou tagata faʻatau:
1. maualuga-vevela faiga fa'aleaga vaega: 6N ufiufi poloka poloka le mama.
O le sui soo o le SiC i vaega o le quartz e faʻateleina ai le faʻafefeteina i le 8 taimi.
2. Fuafuaga fa'atumauina le CTE mo le fa'alauteleina o le vevela e le fetaui o vaega o le fanua vevela i le faasologa atoa o mea SiC.
3. Ultra-polished luga togafitiga o uamea contamination i tua o le wafer (Ra 0.2μm).
Faʻamanuiaga Faʻamasino
Manuia lelei o vaega fa'apitoa fa'apitoa:
1. SiC ogaumu paipa - Fa'avae mama meafaitino: 99.9% sintered silicon carbide
▶ Tete'e fa'avevela fa'ate'ia e fa'a 3 taimi (fa'alili vave> 1600 ℃)
O le coefficient o le faʻalauteleina o le vevela e maualalo ile 4.6 × 10⁻⁶ / ℃
Fa'apipi'i Nanoscale - fa'aputuga CVD o le 6N-grade maualuga-mama SiC (99.9999%)
▶ Puipuia le fa'asalalauina o metala pei ole Fe ma le Ni
▶ Fa'avaa o luga Ra <0.5μm
2. Va'a wafer SiC - Fa'atasi ma 12-inisi sifi
- Fuafuaga faʻapipiʻi faʻapipiʻi tele
▶ 100% fa'afetauiga vevela ma fa'apa'au o le ogaumu
Ole fua ole fa'aleagaina ole wafer e itiiti ifo ile 0.01 ppb
3. Faiga foe Cantilever - isostatic graphite substrate + SiC coating
- Sa'o atoatoa otometi ±0.1mm
▶ Ola fetolofi > 100,000 taimi
O le feʻaveaʻi vibration e itiiti ifo i le 5μm
Fa'amatalaga fa'atekonolosi fa'alavelave
Le Fouvalega Mama
Faiga puipuia tulaga lua
O le fa'avae o le 99.9% SiC → e fausia ai se fa'avae malosi
O le 6N-level CVD-SiC i le vaega galue e fausia ai se tulaga faʻamaufaʻailogaina
puipui
Pulea le mama: Na / K <0.1ppm, metala mamafa <5ppb, faʻafetaui manaʻoga o faiga i lalo ole 28nm
System synergy manuia
● Fa'ameamea fanua laugatasia: Tolu fa'amea mafanafana mamanu o ogaumu faagaau + va'a wafer + foe lau, o le eseesega o le vevela i le sone vevela tumau (> 1200℃) o ≤±1.5℃
● Faʻaluaina le ola: O le fofo atoa e faʻalautele le ola i le 40% pe a faʻatusatusa i le hybrid system, ma le MTBA e sili atu i le 8,000 itula

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