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SiC Ceramic
Silicon-Carbide-umu-faagaau
Silicon-Carbide-umu-faagaau

Silicon Carbide ogaumu paipa


Nofoaga o le Amataga: ōmea
Igoa Brand: Semixlab
Numera faataitaiga: SCFT-01
Tusi Faamaonia: ISO9001
Lafoga Faʻatonu Aupito Manaomia: 1 Vaega
tau: Fa'afeso'ota'i mo upusii fa'apitoa
Faʻamatalaga: Foam Anti-Static + Pusa Plywood(Fa'atonu)
Taimi Faaooina atu: 60-90 Aso Ina ua maeʻa le faʻamaoniga o Poloaiga
Tuutuuga totogi: T / T
Gafatia Tuuina atu: 100 Iunite/Masina
faʻamatalaga

Semixlab e tu'uina atu le Ultra-maualuga mama SiC ogaumu fa'aaumu faiga fa'aauaumu, semiconductor-grade fa'amama vaifofo ma 99.9999% mama fa'apipi'i ma le tu'uina atu laina atoatoa.

Fa'atatau taua

Tuuina atu se si'osi'omaga vevela e leai se filogia mo le gaosiga o le wafer: 99.9% SiC mama o substrate + 99.9999% mama o le CVD coating, tu'ufa'atasia ma se SiC atoa cantilever foe & wafer va'a faiga, e ausia le filogia u'amea i le potu faagasologa.

Igoa eseese mo oloa:

O le vevela maualuga o le ogaumu SiC paipa; silicon carbide paipa; maualuga mama SiC paipa; Silicon carbide paipa mo le ogaumu faasalalau; Silicon carbide paipa mo le faasalalauina & LPCVD faagasologa; SiC paipa mo RTP, SiC paipa mo oxidation

Fa'amatalaga autu:

Mama meafaitino: O le mea autu o le silicon carbide ma le mama o le sili atu i le 99.9%, ma le mama pe a uma le CVD coating e sili atu i le 99.9999% (6N grade).

Fa'atinoga o le vevela: O le maualuga o le fa'aogaina o le vevela 1650 ℃ (umi-umi), coefficient o le fa'alauteleina o le vevela: 4.6 × 10⁻⁶ / ℃, tutusa i le sone vevela tumau: ± 1.5℃ (1200℃);

Malosi fa'ainisinia: Malosi o le punou 450Mpa (i le vevela o le potu).

auiliili
Mea fa'aletino ole Sintered Silicon Carbide
meatotino Tausaga masani
tuufaatasiga vailaau SiC>99.9%
Tele tele >3.07 g/cm³
Fa'aa'oa'o fa'aa'oa'o
Modulus o le malepelepe ile 20℃ 270 MPa
Modulus o le malepelepe ile 1200℃ 290 MPa
Malosi ile 20℃ 2400 Kg/mm²
Malosi gau i le 20% 3.3 MPa · m1/2
Conductivity vevela ile 1200℃ 45 w/m .K
Fa'alauteleina le vevela ile 20-1200℃ 4.6 × 10-6/℃
Max.working vevela 1650 ℃ (taimi umi)
Tete'e te'i vevela ile 1200℃ Lelei
talosaga

Fa'aoga autu

Lave fanua vevela

Fa'atūina se fanua mautu ma tutusa vevela i totonu o le va o le 1200 ℃ i le 1650 ℃ (o le eseesega o le vevela i le sone vevela tumau o le ≤± 1.5 ℃)

Ia fa'amautinoa le tulaga fa'amamafa o fa'agasologa e pei o le fa'asalalauina, fa'ama'iina ma le fa'ama'i.

Fa'amama fa'a'ese'esega

poloka le faʻasalalauina o ion uʻamea (e pei o Fe / Ni / Cu, ma isi) e ala i mea maualuga-mama (pei o le SiC).

Fa'asao le fa'a'ese'esega i le va o kasa fa'agaioiga ma le si'osi'omaga i fafo.

Fa'agasolo ala kesi

Fa'atonu tonu le ta'amilosaga ma le tufatufaina atu o kasa tali (e pei ole O₂/N₂/SiH₄, ma isi)

Ausia fa'agaio'iga o le kasa fa'atasi i luga ole la'au wafer (pei o le SiO₂ tuputupu a'e).

Photovoltaic coating: Lagolago TOPCon/HJT cell PECVD faagasologa wafer felauaiga.

Faʻaaliga faʻaaogā

● Epitaxy

● Oxidation/Diffusion

● LPCVD/PECVD faagasologa

● Su'ega o III-V fa'afefiloi semiconductor

Fofo i vaega tiga o pisinisi

O a matou fofo e faʻafeiloaʻi ai tulaga tiga o matou tagata faʻatau:

1. maualuga-vevela faiga fa'aleaga vaega: 6N ufiufi poloka poloka le mama.

O le sui soo o le SiC i vaega o le quartz e faʻateleina ai le faʻafefeteina i le 8 taimi.

2. Fuafuaga fa'atumauina le CTE mo le fa'alauteleina o le vevela e le fetaui o vaega o le fanua vevela i le faasologa atoa o mea SiC.

3. Ultra-polished luga togafitiga o uamea contamination i tua o le wafer (Ra 0.2μm).

Faʻamanuiaga Faʻamasino

Manuia lelei o vaega fa'apitoa fa'apitoa:

1. SiC ogaumu paipa - Fa'avae mama meafaitino: 99.9% sintered silicon carbide

▶ Tete'e fa'avevela fa'ate'ia e fa'a 3 taimi (fa'alili vave> 1600 ℃)

O le coefficient o le faʻalauteleina o le vevela e maualalo ile 4.6 × 10⁻⁶ / ℃

Fa'apipi'i Nanoscale - fa'aputuga CVD o le 6N-grade maualuga-mama SiC (99.9999%)

▶ Puipuia le fa'asalalauina o metala pei ole Fe ma le Ni

▶ Fa'avaa o luga Ra <0.5μm

2. Va'a wafer SiC - Fa'atasi ma 12-inisi sifi

- Fuafuaga faʻapipiʻi faʻapipiʻi tele

▶ 100% fa'afetauiga vevela ma fa'apa'au o le ogaumu

Ole fua ole fa'aleagaina ole wafer e itiiti ifo ile 0.01 ppb

3. Faiga foe Cantilever - isostatic graphite substrate + SiC coating

- Sa'o atoatoa otometi ±0.1mm

▶ Ola fetolofi > 100,000 taimi

O le feʻaveaʻi vibration e itiiti ifo i le 5μm

Fa'amatalaga fa'atekonolosi fa'alavelave

Le Fouvalega Mama

Faiga puipuia tulaga lua

O le fa'avae o le 99.9% SiC → e fausia ai se fa'avae malosi

O le 6N-level CVD-SiC i le vaega galue e fausia ai se tulaga faʻamaufaʻailogaina
puipui

Pulea le mama: Na / K <0.1ppm, metala mamafa <5ppb, faʻafetaui manaʻoga o faiga i lalo ole 28nm

System synergy manuia

● Fa'ameamea fanua laugatasia: Tolu fa'amea mafanafana mamanu o ogaumu faagaau + va'a wafer + foe lau, o le eseesega o le vevela i le sone vevela tumau (> 1200℃) o ≤±1.5℃

● Faʻaluaina le ola: O le fofo atoa e faʻalautele le ola i le 40% pe a faʻatusatusa i le hybrid system, ma le MTBA e sili atu i le 8,000 itula

tatou Auaunaga

Semixlab Fa'atau oloa

fesili

Tulaga vevela