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TaC Planetary Epi Susceptor
| Nofoaga o le Amataga: | ōmea |
| Igoa Brand: | Semixlab |
| Numera faataitaiga: | TPES0001 |
| Tusi Faamaonia: | ISO 9001 |
| Lafoga Faʻatonu Aupito Manaomia: | 1pc |
| tau: | patino e |
| Faʻamatalaga: | Pusa e auina atu i fafo |
| Taimi Faaooina atu: | 30-45days |
| Tuutuuga totogi: | Ia feutagai |
| Gafatia Tuuina atu: | 200pcs i masina |
faʻamatalaga
O le tisiki paneta Aixtron o se vaega autu o loʻo faʻapipiʻiina i masini uʻamea vailaʻau faʻamaʻi (MOCVD), e masani ona faʻaaogaina i le faagasologa o le tuputupu aʻe o laupepa epitaxial silicon carbide (SiC). O lona fausaga autu o loʻo faʻaaogaina ai le mamanu tuʻufaʻatasia o mea graphite maualuga mama + tantalum carbide (TaC) faʻapipiʻi.
Faʻamatalaga Faʻamatalaga:
1. Isi igoa: Aixtron paneta tisiki, TaC coated paneta susceptor, SiC Epi susceptor mo Aixtron reactor
2. Fa'aoga: Mo le maualuga o le silicon carbide (SiC), gallium nitride (GaN) ma isi fa'asologa lona tolu o le semiconductor epitaxial process.
3. Fa'asologa autu:
O le fausaga e tumau mautu i le 2000 ℃ e aloese ai mai le faʻafefe o le faʻaleagaina o le potu tali.
Lelei le tetee atu i le tafia o kasa muamua e pei ole SiH₄ ma le HCl. Fa'aitiitia fa'aletonu i luga ole mea'ai.
O le faʻaogaina o le vevela o le graphite + TaC composite structure e latalata ile SiC wafer (SiC: 490 W / m · K), faʻaitiitia ai le faʻalavelave lattice e mafua mai i le vevela vevela.
O le gaogao o le taC coating o le <1μm, lea e mafai ona taofia le pa'u ese o micro-particles ma faʻamautinoa le lelei o luga ole epitaxial layer (defect density <0.5/cm²).
Vaʻaiga lautele
O le tisiki paneta Aixtron o se vaega autu o loʻo faʻapipiʻiina i masini uʻamea vailaʻau faʻamaʻi (MOCVD), e masani ona faʻaaogaina i le faagasologa o le tuputupu aʻe o laupepa epitaxial silicon carbide (SiC). O lona fausaga autu e faʻaaogaina ai le mamanu tuʻufaʻatasia o mea faʻamama graphite maualuga + tantalum carbide (TaC) faʻapipiʻi:
Graphite substrate: maua conductivity vevela sili ona lelei (~ 130 W / m · K) ma le mautu maualuga vevela (vevela> 2000 ℃) e faʻamautinoa ai le tufatufaina atu o fanua vevela tutusa i le potu tali.
Tantalum carbide coating: O le graphite o loʻo ufiufiina e se vailaʻau vaʻaia (CVD) poʻo se faʻagasologa faʻasolosolo, e masani lava 30-100um mafiafia, e fausia ai se paʻu vailaʻau mafiafia.
O le mamanu e sili ona lelei mo le maualuga o le vevela (1500-1700 ℃), sili ona leaga (silane, HCl ma isi kasa) siosiomaga o le SiC epitaxial tuputupu aʻe, faʻaleleia atili le faʻamautuina o le faagasologa ma le fua o le wafer.
Tantalum carbide (TaC) ma le silicon carbide (SiC) faʻapipiʻiina faʻatusatusaga faʻatinoga
| Mea e ufiufi ai | Tantalum carbide (TaC) ufiufi | Silicon carbide (SiC) faʻapipiʻi |
| Mea faʻamafanafana | Liu liusuavai 3880℃ (maualuga le vevela tapula'a) | Liu liusuavai 2700 ℃ (faigofie ona pala ile vevela maualuga) |
| Coefficient fa'alauteleina vevela | Fa'ateleina fa'aalili 6.3×10⁻⁶/K (sili atu le fetaui ma le kalafi) | 4.5 × 10⁻⁶/K (faigofie ona ta'e ona o le vevela le fetaui) |
| Tete'e i le ausa ausa silika | Ma'eu le tete'e i le ausa o le silikoni (maualalo TaC ma Si reactivity) | leaga (i le maualuga o le vevela e tali atu SiC ma Si e fausia ai le kasa Si₂C) |
| A'afiaga o le filogia o vaega | E matua maualalo lava le lamatiaga o le faʻaleagaina o mea iti (faʻapipiʻi mafiafia e aunoa ma ni pores) | Maualuluga (pepa e faigofie ona pa'u i le lotoifale) |
| olaga Atoa | Ole ola tautua> 5000 itula (fa'ateleina le tausiga o le taamilosaga sili atu i le 50%) | E uiga i 2000-3000 itula |
Gaosia fetauiga
Fetuuna'i i le Aixtron G5 WW C ma le Perofeta platform, e mafai ona tauaveina 6/8-inisi wafers ma le gafatia o le 30 wafers/batch.
Taua fa'atekinisi ma le taua o alamanuia
Graphite + tantalum carbide coated paneta susceptor foia le faafitauli bottleneck o SiC coating masani i le faagasologa umi o le vevela maualuga:
Fa'atonuga o tau: fa'alautele le ta'amilosaga sui o mea fa'aaoga ma fa'aitiitia le tau epitaxial o se fasi pepa e sili atu i le 20%;
Faʻaleleia atili: faʻaitiitia le filogia ma le vevela o aʻafiaga, ma faʻaleleia le maua o le pepa epitaxial e sili atu i le 95%;
Fa'agasolo fa'amalama fa'alautele: lagolago maualuga fua faatatau tuputupu a'e (> 50μm/h) ma mafiafia epitaxial layers.
Aʻo faʻaleleia le malosi o le SiC i le 8 inisi, o lenei tekinolosi o le a avea ma auala taua e malepe ai le faʻaogaina o le epitaxial.
auiliili
| Mea fa'aletino ole fa'alavalava TaC | |
| Density | 14.3 (g/cm³) |
| Emisi fa'apitoa | 0.3 |
| Malosiaga faʻalauteleina vevela | 6.3 10-6/K |
| Malosi (HK) | 2000 HK |
| teteʻega | 1×10-5 Ohm*cm |
| Mautu vevela | <2500 ℃ |
| Suiga le tele o le kalafi | -10~-20um |
| Mafiafia -O | ≥20um tau masani (35um±10um) |
| Faʻaauau le gaioiga | 9-22(W/m·K) |
| O mea fa'aletino ole kalafi isostatic | ||
| meatotino | Vaega | Tausaga masani |
| Tele tele | g / cm³ | 1.83 |
| maaa | HSD | 58 |
| Resistivity eletise | μΩ.m | 10 |
| Malosiaga fetuutuunai | MPa | 47 |
| Malosiaga Faʻamalosi | MPa | 103 |
| Malosi o Tenisi | MPa | 31 |
| Young's Modulus | GPa | 11.8 |
| Fa'alauteleina o le vevela(CTE) | 10-6K-1 | 4.6 |
| Thermal Conductivity | W·m-1·K-1 | 130 |
| Fua Fa'atatau o Saito | μm | 8-10 |
talosaga
Silicon carbide eletise masini epitaxy
E fetaui lelei mo le 4H-SiC homogeneous epitaxial growth, lea e faʻaaogaina e gaosia ai masini MOSFET ma IGBT maualuga i luga ole 1200V.
Ua si'itia le mana'omia o taavale fou, photovoltaic inverters, rail transit ma isi matā'upu.
Fausiaina o le semiconductor tupulaga lona tolu
Lagolago GaN-on-SiC heteroepitaxy faagasologa mo masini 5G RF ma milimita galu fesoʻotaʻiga meataalo.
Faʻamanuiaga Faʻamasino
Aotelega o tulaga lelei autu:
O le taC coating e sili atu nai lo le masani SiC coating i tulaga o le corrosion resistance i le maualuga o le vevela, vevela ma le umi o le ola, aemaise lava le talafeagai mo le siosiomaga faʻatamaoaigaina ausa i le SiC epitaxial tuputupu aʻe.
Tete'e i le vevela tele:
O le fausaga e tumau mautu i le 2000 ℃ e aloese ai mai le faʻafefe o le faʻaleagaina o le potu tali.
Tetee vailaau:
Lelei le tetee atu i le tafia o kasa muamua e pei ole SiH₄ ma le HCl. Fa'aitiitia fa'aletonu i luga ole mea'ai.
Tulaga tutusa o le vevela:
O le faʻaogaina o le vevela o le graphite + TaC composite structure e latalata ile SiC wafer (SiC: 490 W / m · K), faʻaitiitia ai le faʻalavelave lattice e mafua mai i le vevela vevela.
E maualalo le fa'aleagaina:
O le gaogao o le taC coating o le <1μm, lea e mafai ona taofia le pa'u ese o micro-particles ma faʻamautinoa le lelei o luga ole epitaxial layer (defect density <0.5/cm²).
