Isostatic Graphite mama maualuga

maualuga mama isostatic graphite o se ituaiga o mea faapitoa graphite saunia e malulu isostatic molding (CIP) ma ultra-maualuga vevela graphidification faagasologa (luga 2800 ℃). O lona anotusi carbon o ≥99.9995%, u'amea eleelea autu (Fe, Ni, Cr) ≤0.3ppm, boron / phosphorus anotusi ≤0.05ppm, mea efuefu ≤5ppm. Faʻafeiloaʻi tulaga mama semiconductor grade (SEMI F63). O le fausaga i totonu o le meafaitino e tolu-dimensional isotropic, o le saito tele e toniga (D50 = 10-15μm), o le density o le 1.85-1.90g / cm³, ma o loʻo i ai ultra-maualuga le vevela conductivity (120-150W / m · K) ma matua maualalo le faʻalauteleina o le vevela coefficient (CTE≤4.0 × 10 ℃). E mafai ona faʻaaogaina i le 6 ℃ le siosiomaga inert mo se taimi umi, ma o le numera o le vevela o le taamilosaga e sili atu i le 20 taimi (1000 ℃ ↔ potu vevela suiga vave).

Fa'agasologa o le gaosiga maualuga

Fa'amamaina o mea mata

O le faʻaaogaina o le suauʻu suauʻu sulfur ultra-maualalo e pei o le substrate, 99.9999% uʻamea eleelea na aveesea e le plasma vailaʻau faʻamamāina tekinolosi, ma o le mea efuefu na faʻaitiitia mai le 300ppm muamua i lalo ifo o le 5ppm ma le hydrochloric acid-hydrofluoric acid gradient gradient process pickling.

Isostatic oomi fa'asolo

I le ala vai o le 200MPa ultra-maualuga mamafa mo le 60 minute, o le densification atoatoa o vaega o le paʻu ua iloa, o le eseesega density meafaitino e itiiti ifo nai lo le 0.5%, ma o le faaletonu gradient density o le faiga faʻaleaganuʻu masani ua faʻaumatia atoa.

Fa'ata'ita'iga o le vevela maualuga

Fa'aauau graphitization na faia mo 120 itula i lalo o le puipuiga o argon kasa i le 2800-3200 ℃. O le tikeri o le graphitization o le ≥98%, o le lattice layer spacing (d002) sa mautu i le 0.3354-0.3360nm, ma le isotropic rate (CTE anisotropy) sa ≤3%.

Sa'o machining ma luga o le togafitiga

O loʻo faʻatautaia e le lima-axis CNC masini masini, o le saʻo saʻo o le ± 0.01mm, ma le maualuga o le Ra≤0.4μm. SiC po'o le TaC vaila'au fa'aputu ausa (mafiafia 2-5μm) e filifili e fa'aitiitia le tu'uina atu o le vevela maualuga i le <1μg/cm²·h.

Fa'aoga autu ile semiconductor field

Faiga fa'avevela mo le tuputupu a'e o le silikoni monocrystalline

Crucible ma faavevela: fa'aauauina pea i le 1600 ℃ i argon siosiomaga mo 6000 itula e aunoa ma deformation, lagolago 300mm wafer tuputupu axial vevela gradient ≤2 ℃/cm, lattice fua faatatau faaletonu e mafua mai le carbon pollution <0.05/cm².

Fa'alava fa'a'avevela ma fa'agogo ta'ita'i fa'asolo: porous gradient structure design (porosity 5-20% adjustable), sa'o lelei fa'atonutonu fa'avevela vevela ±1.5%, fesoasoani e pulea le okesene i totonu o le kasa tioata tasi <10¹⁴ atoms/cm³.

Fa'apipi'i ion ma meafaigaluega etching

Tu'u le fata ma le mama taula'i: fa'aleagaina u'amea luga ≤0.1ppb, fa'apalepale i 10¹⁶ ion/cm² fa'ao'o, ma 3 taimi le umi o le tautua nai lo mea masani.

Plasma electrode: fa'aeletonika emission mautu fevaevaea'iga <0.5%, talafeagai mo 5nm faagasologa etching uniformity manaoga.

Epitaxial tuputupu aʻe o semiconductors tuufaatasia

MOCVD graphite base: GaN/SiC mafiafia inhomogeneity <±1.5%, faʻapipiʻi i luga e faʻaitiitia ai le tele o faaletonu e mafua mai i le graphite volatils i le <0.01/cm².

Faʻamatalaga Faʻamatalaga:

1. Isi igoa: Isostatically pressed graphite, isotropic graphite.

2. Fa'aaogāga: Tasi fa'amalama ogamu tioata, EDM electrode, photovoltaic silicon wafer graphite mold.

3. Fa'asologa autu: Mama ≥99.9995%, mamafa 1.80-1.85g/cm³.

Monocrystalline silicon tuputupu aʻe ogaumu mafanafana fanua potopotoga.

Electrodischarge machining (EDM) electrodes.

Fa'ali'i fa'akalafi mo le fa'a'aiina o fa'ama'i fa'asolo.

Alamanuia pito i luga mama (5N vasega), faaitiitia faiga filogia.

Isotropic fausaga, tulaga tau masini.

Lagolago machining sa'o e oo atu i le ±0.01mm faapalepale.